RF LINEAR AMPLIFIER
anything about rf power amplifier using Mosfets . bipolar transistor . tube . etc
Thursday, August 19, 2021
How To Measure Ferrite Inductor For 1kw Mosfet Rf Amplifier
Tutorial Setting Bias 1kw Mosfet Rf Amplifier
Tutorial Setting Bias 1kw Mosfet Rf Amplifier
Eliza Sukiman
tutorial setting bias 1kw mosfet rf amplifier
Wednesday, January 13, 2021
300 W PEP with BLF177(1.6 ... 28 MHz)
300 W PEP with 2 MOS transistors BLF177(1.6 ... 28 MHz)
The BLF177 is an RF Power MOS transistor
for the HF and VHF range in a 4 leads flange SOT121 encapsulation. For the
frequency range 1.6 - 28 MHz a wideband push-pull power amplifier has been
developed with 2 BLF177 having an output power of 300 W PEP at an
intermodulation distortion level below -30 dB.
The transistors operate in class-AB at
VDS = 50 V and a quiescent current of 0.5 A each.
CONSTRUCTION OF THE AMPLIFIER
r = 4.5. The position of the components
is on one side and the other side serves as a groundplane. Connections to the
groundplane have been made with rivets and with straps under the source leads
and at the edges of the PC-board on the in- and output side.eFor the printed circuit board double Cu-clad epoxy fibre glass has been
used with a thickness of 1/16” and
The printed circuit board has been
attached to a solid copper plate which functions as a heatsink.
Around the position of both transistors
a tube has been soldered in the copper plate to controle the temperature by
means of a watercooling system. For a good thermal contact between heatsink and
transistors heatsink compound has been used.
YB0BAJ ...jan13,2021